1/2 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.07 - rev.b medium power transistor( ? 80v, ? 0.7a) 2sb1189 / 2SB1238 ? features ? dimensions (unit : mm) 1) high breakdown voltage, bv ceo = ? 80v, and high current, i c = ? 0.7a. 2) complements the 2sd1767 / 2sd1859. ? absolute maximum ratings (ta=25 ? c) parameter symbol v cbo v ceo v ebo i c p c tj tstg limits ? 80 ? 80 ? 5 ? 0.7 2 1 150 ? 55 to + 150 unit v v v a 0.5 ? 2 ? 1 2SB1238 2sb1189 w c c collector-base voltage collector-emitter voltage emitter-base voltage collector current junction temperature storage temperature collector power dissipation ? 1 when mounted on a 40 40 0.7 mm ceramic board. ? 2 printed circuit board 1.7 mm thick, collector plating 1cm 2 or larger. ? packaging specifications and h fe type 2sb1189 mpt3 qr bd ? t100 1000 2SB1238 atv qr ? tv2 2500 ? denot es h fe package h fe marking code basic ordering unit (pieces) ? electrical characteristics (ta=25 ? c) parameter symbol min. typ. max. unit conditions bv cbo bv ceo bv ebo i cbo i ebo v ce(sat) f t cob ? 80 ? 80 ? 5 ? ? ? ? ? ? ? ? ? ? ? 0.2 100 14 ? ? ? ? 0.5 ? 0.5 ? 0.4 ? 20 v v v a a v mhz pf i c =? 50 a i c =? 2ma i e =? 50 a v cb =? 50v v eb =? 4v h fe 120 ? 390 ? v ce /i c =? 3v/ ? 0.1a i c /i b =? 500ma/ ? 50ma v ce =? 10v, i e = 50ma, f = 100mhz v cb =? 10v, i e = 0a, f = 1mhz collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio transition frequency output capacitance (1) emitter (2) collector (3) base 0.45 1.05 taping specifications 0.5 ( 1 ) 0.65max. 2.54 ( 2 ) 2.54 ( 3 ) 6.8 1.0 14.5 0.9 4.4 2.5 2sb1189 rohm : mpt3 eiaj : sc-62 2SB1238 rohm : atv (1) base (2) collector (3) emitter 1.5 0.4 1.5 0.4 1.6 0.5 3.0 0.4 1.5 ( 3 ) 4.5 ( 1 ) ( 2 ) 0.5 4.0 2.5 1.0
2/2 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.07 - rev.b data sheet 2sb1189 / 2SB1238 ? electrical characteristics curves collector current : i c (a) collector to emitter voltage : v ce (v) fig.1 ground emitter output characteristic s 0 ? 1.0 ? 0.8 ? 0.6 ? 0.4 ? 0.2 ? 10 ? 8 ? 6 ? 4 ? 2 0 ta = 25 c i b = 0ma ? 1ma ? 2ma ? 3ma ? 4ma ? 5ma ? 6ma ? 7ma ? 8ma ? 10ma ? 9ma base to emitter voltage : v be (v) collector current : i c (ma) f ig.2 ground emitter propagation characteristic s ? 50 ? 10 ? 5 ? 2 ? 1 ? 0.5 ? 0.1 ? 0.2 ? 20 ? 1.4 ? 1.6 ? 1.2 ? 1.0 ? 0.8 ? 0.6 ? 0.4 ? 0.2 0 ta = 25 c v ce = ? 6v collector current : i c (ma) dc current gain : h fe fig.3 dc current gain vs. collector current 50 100 200 500 ? 200 ? 100 ? 20 ? 10 ? 1 ? 2 ? 5 ? 50 ? 500 ta = 25 c v ce = ? 5v ? 1 v ? 3 v collector current : i c (ma) collector saturation voltage : v ce(sat) (v) fig.4 collector-emitter saturation voltag e vs.collector current ? 0.2 ? 0.1 ? 0.05 ? 0.02 ? 0.01 ? 200 ? 100 ? 20 ? 10 ? 1 ? 5 ? 50 ? 500 i c /i b = 20/1 i c /i b = 10/1 ta = 25 c emitter current : i e (ma) transition frequency : f t (mhz) fig.5 gain bandwidth product vs. emitter current 500 200 20 50 100 10 5 22050 ta = 25 c v ce = ? 5v collector to base voltage : v ce (v ) collector output capacitance : c ob (pf) fig.6 collector output capacitance vs. collector-base voltage ? 20 ? 10 10 20 50 100 ? 2 ? 1 ? 0.5 ? 5 i e = 0a cob f = 1mhz ta = 25 c emitter to base voltage : v eb (v) emitter input capacitance : c ib (pf) fig.7 emitter input capacitance vs. emitter-base voltage ? 20 ? 10 10 20 50 100 ? 2 ? 1 ? 0.5 ? 5 i c = 0a cib f = 1mhz ta = 25 c collector to emitter voltage : v ce (v ) collector current : i c (a) fig.8 safe operating area (2sb118 9) ? 1.0 ? 0.2 ? 0.1 ? 0.02 ? 0.01 ? 0.002 ? 0.005 ? 0.001 ? 0.05 ? 0.5 ? 10 0 ? 20 ? 10 ? 2 ? 1 ? 0.1 ? 0.2 ? 0.5 ? 5 ? 50 ta = 25 c ? single pulse pw = 10ms ? pw = 100ms ? dc
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